Vishay IRF9520NPBF

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

6.8

Maximum Drain Source Resistance (MOhm)

480@10V

Typical Gate Charge @ Vgs (nC)

27(Max)@10V

Typical Gate Charge @ 10V (nC)

27(Max)

Typical Input Capacitance @ Vds (pF)

350@25V

Maximum Power Dissipation (mW)

48000

Typical Fall Time (ns)

31

Typical Rise Time (ns)

47

Typical Turn-Off Delay Time (ns)

28

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

8.77(Max)

Package Width

4.69(Max)

Package Length

10.54(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220AB

Lead Shape

通孔

包装

Tube

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

P