Vishay IRFB3307ZPBF

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

75

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

128

Maximum Drain Source Resistance (MOhm)

5.8@10V

Typical Gate Charge @ Vgs (nC)

79@10V

Typical Gate Charge @ 10V (nC)

79

Typical Input Capacitance @ Vds (pF)

4750@50V

Maximum Power Dissipation (mW)

230000

Typical Fall Time (ns)

65

Typical Rise Time (ns)

64

Typical Turn-Off Delay Time (ns)

38

Typical Turn-On Delay Time (ns)

15

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.02(Max)

Package Width

4.82(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220AB

Lead Shape

通孔

包装

Tube

零件状态

活跃

引脚数量

3

配置

Single

信道型

N