VISHAY SI1965DH-T1-GE3

Type of transistor

P-MOSFET x2

Polarisation

unipolar

Drain-source voltage

-12V

Drain current

-1.3A

Pulsed drain current

-3A

Case1

SOT363

Case

SC70-6

Gate-source voltage

±8V

Mounting

SMD

Kind of package1

tape

Kind of package

reel

Kind of channel

enhanced

Gross weight

0.1g

Certificates

RoHS compliant

Power dissipation

1.25W

Gate charge

4.2nC

On-state resistance

710mΩ