VISHAY SI5504BDC-T1-GE3

Type of transistor

N/P-MOSFET

Polarisation

unipolar

Drain-source voltage

30/-30V

Drain current

4/-3.7A

Gate-source voltage

±20V

Mounting

SMD

Kind of package

reel,

Kind of channel

enhanced

Gross weight

0.001 g

Power dissipation

3.1/3.12W

Gate charge

7nC

On-state resistance

235/100mΩ