VISHAY SI5513CDC-T1-GE3

Type of transistor

N/P-MOSFET

Polarisation

unipolar

Drain-source voltage

20/-20V

Drain current

4/-3.7A

Gate-source voltage

±12V

Mounting

SMD

Kind of package

reel,

Kind of channel

enhanced

Gross weight

0.001 g

Power dissipation

3.1W

Gate charge

5.6/4.2nC

On-state resistance

255/85mΩ