VISHAY SIA537EDJ-T1-GE3

Type of transistor

N/P-MOSFET

Polarisation

unipolar

Drain-source voltage

12/-20V

Drain current

4.5/-4.5A

Gate-source voltage

±8V

Mounting

SMD

Kind of package

reel,

Kind of channel

enhanced

Gross weight

0.1 g

Power dissipation

7.8W

Gate charge

25/16nC

On-state resistance

165/104mΩ