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技术文档

价格梯度
内地含税价
1
¥7.667713
10
¥7.23369
100
¥6.824236
500
¥6.437963
1000
¥6.073547
Vishay Intertechnologies SI5515CDC-T1-GE3
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- 对比
SI5515CDC-T1-GE3
2668-SI5515CDC-T1-GE3
晶体管 - 特殊用途
--
大陆
立即发货

Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
--最小包装量--
¥
总价: ¥
SI5515CDC-T1-GE3详情
Vishay Intertechnologies SI5515CDC-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
polyolefin
终端数量
8
晶体管元件材料
SILICON
外壳材料
2
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
Drain Current-Max (ID)
4 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Weight gross
1697.50
Transport packaging size/quantity
46*46*58/9
Diameter before shrinkage
4.8 mm
Diameter after shrinkage
1.6 mm
Nominal diameter
4.8 mm
Wall thickness before shrinkage
0.48 mm
Shrinkage temperature
100 °C
Maximum working voltage
1500 V
包装
reel 100 m
JESD-609代码
e3
ECCN 代码
EAR99
类型
Heat shrink tube with adhesive layer
端子表面处理
哑光锡
颜色
green
端子位置
DUAL
终端形式
C 弯管
Reach合规守则
compliant
JESD-30代码
R-PDSO-C8
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
注意
Possible deviation of shrinkage diameter up to +1.5 mm
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL AND P-CHANNEL
Operating temperature range
-55…+125 °C
漏极-源极导通最大电阻
0.036 Ω
DS 击穿电压-最小值
20 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
3.1 W
Shrinkage ratio
3 : 1
饱和电流
1
长度
100000 mm
SI5515CDC-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies






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