Vishay Intertechnologies SQJ500AEP-T1_GE3
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SQJ500AEP-T1_GE3
2668-SQJ500AEP-T1_GE3
晶体管 - 特殊用途
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大陆
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Description: Power Field-Effect Transistor,
--最小包装量--
SQJ500AEP-T1_GE3详情
Vishay Intertechnologies SQJ500AEP-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
20 Weeks
表面安装
YES
材料
Zinc alloy
质量
0.26 kg
终端数量
4
晶体管元件材料
SILICON
外壳材料
2
Gross Weight
171.00
Transport packaging size/quantity
34*25*24/50
Operating ambient temperature
-25 to +60 °C
Transducer type
Threaded mounting element
Mounting hole size
60
Purpose
fastening element for connecting metal conduit of MP series to housing equipment
Protection class
IP54
Sealing material
Oil-resistant rubber
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SO-8L, 4 PIN
Drain Current-Max (ID)
30 A
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Turn-off Time-Max (toff)
49 ns
Turn-on Time-Max (ton)
30 ns
ECCN 代码
EAR99
类型
MB series entry coupling
端子位置
SINGLE
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
深度
55.6 mm
Reach合规守则
unknown
时间@峰值回流温度-最大值(s)
未说明
参考标准
AEC-Q101
JESD-30代码
R-PSSO-G4
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
N-CHANNEL AND P-CHANNEL
Operating temperature range
-25…+60 °C
漏极-源极导通最大电阻
0.0092 Ω
脉冲漏极电流-最大值(IDM)
120 A
DS 击穿电压-最小值
40 V
雪崩能量等级(Eas)
35 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
48 W
反馈上限-最大值 (Crss)
111 pF
直径
(d1) - G 2"; through hole (D) - 62 mm; casing (D1) - 70 mm
长度
55.6 mm
SQJ500AEP-T1_GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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