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BSP296NH6433XTMA1备选型号: DMN10H220LE-13

BSP296NH6433XTMA1

Infineon Technologies

Trans MOSFET N-CH 100V 1.2A 4-Pin SOT-223 T/R

10 Weeks
Tin
表面贴装
表面贴装
TO-261-4, TO-261AA
4
250.212891mg
SILICON
1.2A Ta
-55°C~150°C TJ
Tape & Reel (TR)
OptiMOS™
2013
yes
活跃
1 (Unlimited)
4
EAR99
AVALANCHE RATED; LOGIC LEVEL COMPATIBLE
DUAL
鸥翼
未说明
未说明
SINGLE WITH BUILT-IN DIODE
1
增强型MOSFET
DRAIN
N-Channel
600m Ω @ 1.2A, 10V
1.8V @ 100μA
152.7pF @ 25V
6.7nC @ 10V
3.8ns
100V
±20V
1.2A
20V
0.6Ohm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
DMN10H220LE-13

Diodes Incorporated

MOSFET N-CH 100V 2.3A SOT223

22 Weeks
-
表面贴装
表面贴装
TO-261-4, TO-261AA
3
-
SILICON
2.3A Ta
-55°C~150°C TJ
Cut Tape (CT)
-
2014
-
活跃
1 (Unlimited)
4
EAR99
HIGH RELIABILITY
DUAL
鸥翼
-
-
SINGLE WITH BUILT-IN DIODE
-
增强型MOSFET
DRAIN
N-Channel
220m Ω @ 1.6A, 10V
2.5V @ 250μA
401pF @ 25V
8.3nC @ 10V
8.2ns
100V
±20V
2.3A
20V
0.22Ohm
ROHS3 Compliant
e3
Matte Tin (Sn)
DMN10H22
AEC-Q101
R-PDSO-G4
6.8 ns
SWITCHING
3.6 ns
8A
100V
无铅
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分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	DMN10H220LE-13	Diodes Incorporated	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	MOSFET N-CH 100V 2.3A SOT223	对比
	BSP322PL6327HTSA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	Trans MOSFET P-CH 100V 1A 4-Pin(3 Tab) SOT-223 T/R	对比
	PMT200EN,115	NXP USA Inc.	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	MOSFET N-CH 100V 1.8A SC-73	对比