登录 / 注册

产品

输入型号/关键词

STGW50H60DF备选型号: HGTG30N60A4D

STGW50H60DF

STMicroelectronics

IGBT Transistors 50A 600V FST IGBT Ultrafast Diode

通孔
通孔
TO-247-3
6.500007g
SILICON
600V
1.8V
-55°C~150°C TJ
Tube
e3
Obsolete
1 (Unlimited)
3
EAR99
Tin (Sn)
360W
STGW50
3
R-PSFM-T3
Single
Standard
62 ns
360W
电源控制
N-CHANNEL
600V
100A
55 ns
91 ns
1.8V @ 15V, 50A
285 ns
沟渠现场停车
217nC
200A
62ns/178ns
890μJ (on), 860μJ (off)
20V
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HGTG30N60A4D

ON Semiconductor

FAIRCHILD SEMICONDUCTOR HGTG30N60A4DIGBT Single Transistor, General Purpose, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

通孔
通孔
TO-247-3
6.39g
SILICON
600V
1.8V
-55°C~150°C TJ
Tube
e3
不用于新设计
1 (Unlimited)
3
EAR99
-
463W
HGTG30N60
-
-
Single
Standard
25 ns
-
电源控制
N-CHANNEL
600V
75A
55ns
35 ns
2.6V @ 15V, 30A
238 ns
-
225nC
240A
25ns/150ns
280μJ (on), 240μJ (off)
-
无
ROHS3 Compliant
无铅
ACTIVE, NOT REC (Last Updated: 2 days ago)
5 Weeks
Tin
3
2016
yes
低导通损耗
8541.29.00.95
600V
30A
463W
COLLECTOR
12s
20.82mm
15.87mm
4.82mm
无SVHC
添加型号

分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	STGW39NC60VD	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	STMICROELECTRONICS STGW39NC60VD IGBT Single Transistor, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins	对比
	STGW45HF60WD	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	Trans IGBT Chip N-CH 600V 70A 3-Pin(3 Tab) TO-247 Tube	对比
	NGTB50N60S1WG	ON Semiconductor	晶体管 - IGBT - 单个	TO-247-3	ON SEMICONDUCTOR NGTB50N60S1WG IGBT Single Transistor, 100 A, 1.8 V, 417 W, 600 V, TO-247, 3 Pins	对比