N/A

-

BGA-165

165

153@Flow-Through/200@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

有

200 MHz

+ 125 C

3.6 V

- 55 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

-55 to 125 °C

Tray

GS8162Z18DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

240 mA, 245 mA

6.5@Flow-Through/3@P

1 M x 18

SRAM

18

SRAM

N/A

-

165

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Industrial grade

-40 to 100 °C

GS81302D10E

2

Pipelined

22 Bit

144 Mbit

Industrial

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

0 to 70 °C

Tray

GS8128436GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

350 mA, 440 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS81284Z18B-250I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.82

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS81284Z18B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

390 mA, 490 mA

6.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302DT07GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.065 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Military grade

153@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 125 C

3.6 V

- 55 C

21

2.3 V

SMD/SMT

-55 to 125 °C

Tray

GS8162Z36DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

255 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Military

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

Commercial grade

表面贴装

1.9 V

9 Bit

2 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

375 MHz

有

375 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8182S09BGD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

2

680 mA

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

TQFP-100

YES

100

有

GS81280E36GT-200

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

85 °C

Tray

GS81280E36GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

330 mA, 400 mA

6.5 ns

4 M x 36

1.6 mm

36

150994944 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

YES

165

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS82582Q20GE-400I

400 MHz

16777216 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

400 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

QDR-II

有

10

SigmaQuad-II+

1.9 V

Tray

GS82582Q20GE

3A991.B.2.B

SigmaQuad-II+ B2

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8 V

INDUSTRIAL

288 Mbit

SYNCHRONOUS

1.18 A

16 M x 18

3-STATE

1.5 mm

18

301989888 bit

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

17 mm

15 mm

N/A

-

12 Weeks

BGA-260

YES

260

85 °C

有

GS81314LD19GK-933

8388608 words

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

QDR-IVe

有

Details

933 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

未说明

Tray

GS81314LD19GK

3A991.B.2.B

SigmaQuad-IVe B4

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.25 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

8388608 words

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Details

933 MHz

Serial

1.25 V

- 40 C

+ 100 C

SMD/SMT

有

10

SigmaDDR-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

未说明

有

GS81314LT19GK-933I

GS81314LT19GK

3A991.B.2.B

SigmaDDR-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

1.75 A

8 M x 18 bit

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

22 mm

14 mm

N/A

-

BGA-165

165

2.7 V

Industrial grade

333 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

SDR

有

18

SyncBurst

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

-40 to 100 °C

Tray

GS816218DD

Pipeline/Flow Through

18 Mbit

2

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

N/A

-

BGA-165

YES

165

未说明

85 °C

有

GS8128236GD-200V

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.69

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

10

SyncBurst

3.6 V

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

Tray

GS8128236GD

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

OTHER

144 Mbit

SYNCHRONOUS

330 mA, 400 mA

6.5 ns

4 M x 36

1.4 mm

36

150994944 bit

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

N/A

-

TQFP-100

YES

100

4194304 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

85 °C

GS81280E32GT-200V

Tray

GS81280E32GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

320 mA, 400 mA

6.5 ns

4 M x 32

1.6 mm

32

134217728 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

12 Weeks

BGA-260

YES

260

GS81314LQ37GK-933

85 °C

PLASTIC/EPOXY

4000000

GRID ARRAY, HEAT SINK/SLUG

HBGA,

Details

933 MHz

Parallel

1.25 V

0 C

+ 85 C

SMD/SMT

QDR-IVe

有

10

SigmaQuad-IVe

1.35 V

5.73

GSI TECHNOLOGY

活跃

RECTANGULAR

HBGA

1.3 V

4194304 words

Tray

GS81314LQ37GK

3A991.B.2.B

SigmaQuad-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.95 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

22 mm

14 mm

N/A

-

BGA-165

YES

165

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

有

GS82582Q20GE-450

450 MHz

16777216 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

450 MHz

Parallel

1.7 V

0 C

+ 70 C

SMD/SMT

QDR-II

有

10

SigmaQuad-II+

1.9 V

LBGA, BGA165,11X15,40

Tray

GS82582Q20GE

3A991.B.2.B

SigmaQuad-II+ B2

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8 V

OTHER

288 Mbit

SYNCHRONOUS

1.28 A

16 M x 18

3-STATE

1.5 mm

18

301989888 bit

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

165

1.9 V

表面贴装

1.9 V

Commercial grade

Details

333 MHz

Parallel

1.7 V

0 C

+ 70 C

SMD/SMT

QDR-II

有

10

SigmaQuad-II+

333 MHz

FPBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

18 Bit

0 to 85 °C

Tray

GS82582QT19GE

SigmaQuad-II+ B2

288 Mbit

1

1 A

Pipelined

16 M x 18

22 Bit

288 Mbit

Commercial

N/A

-

TQFP-100

YES

100

PLASTIC/EPOXY

TQFP100,.4X.6,26

5.5 ns

85 °C

GS8128018GT-250

250 MHz

8388608 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

SyncBurst

15

有

SDR

SMD/SMT

+ 85 C

0 C

2.3 V

Parallel

250 MHz

Details

3.6 V

LQFP, TQFP100,.4X.6,26

FLATPACK, LOW PROFILE

8000000

Tray

GS8128018GT

3A991.B.2.B

Pipeline/Flow Through

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

1

SYNCHRONOUS

330 mA, 420 mA

5.5 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

CONFIGURABLE

缓存SRAM

2.3 V

2.7 V

2.3 V

YES

NO

20 mm

14 mm

N/A

-

BGA-165

YES

165

未说明

0.45 ns

有

GS82582Q19GE-333I

16777216 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

333 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

DDR

有

10

SigmaQuad-II+

1.9 V

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

Tray

GS82582Q19GE

3A991.B.2.B

SigmaQuad-II+ B2

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

288 Mbit

SYNCHRONOUS

1.02 A

16 M x 18

1.5 mm

18

301989888 bit

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

TQFP-100

YES

100

有

GS81280E36GT-250

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

250 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

85 °C

Tray

GS81280E36GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

380 mA, 470 mA

5.5 ns

4 M x 36

1.6 mm

36

150994944 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

TQFP-100

YES

100

PLASTIC/EPOXY

TQFP100,.4X.6,26

4.5 ns

85 °C

GS8128032GT-333

333 MHz

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

333 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP, TQFP100,.4X.6,26

FLATPACK, LOW PROFILE

4000000

Tray

GS8128032GT

3A991.B.2.B

Pipeline/Flow Through

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

1

SYNCHRONOUS

435 mA, 600 mA

4.5 ns

4 M x 32

1.6 mm

32

134217728 bit

PARALLEL

CONFIGURABLE

缓存SRAM

2.3 V

2.7 V

2.3 V

YES

NO

20 mm

14 mm

N/A

-

BGA-260

YES

260

未说明

85 °C

有

GS82583ED18GK-625

16777216 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

625 MHz

Parallel

1.25 V

0 C

+ 85 C

SMD/SMT

QDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

16000000

PLASTIC/EPOXY

Tray

GS82583ED18GK

e1

3A991.B.2.B

SigmaQuad-IIIe B4

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

288 Mbit

SYNCHRONOUS

1.45 A

16 M x 18

2.3 mm

18

301989888 bit

PARALLEL

QDR SRAM

1.25 V

1.15 V

22 mm

14 mm

N/A

-

FBGA-144

YES

144

33554432 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.46

Details

SMD/SMT

400 MHz

1.7 V

0 C

+ 95 C

有

18

0.328550 oz

2.63 V

LBGA,

GRID ARRAY, LOW PROFILE

32000000

PLASTIC/EPOXY

未说明

95 °C

有

GS4576C18GM-25

GS4576C18GM

LLDRAM II

自动刷新

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

OTHER

576 Mbit

1

SYNCHRONOUS

500 mA

18 bit

32 M x 18

1.25 mm

18

603979776 bit

DDR DRAM

1.9 V

1.7 V

多库页面突发

18.5 mm

11 mm

N/A

-

BGA-165

YES

165

85 °C

GS81302DT20AGD-500

8388608 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

500 MHz

Parallel

1.7 V

0 C

+ 85 C

SMD/SMT

QDR

有

10

SigmaQuad-II+

1.9 V

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

0.45 ns

GS81302DT20AGD

SigmaQuad-II+

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

OTHER

144 Mbit

SYNCHRONOUS

920 mA

8 M x 18

1.4 mm

18

150994944 bit

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

TQFP-100

YES

100

8388608 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

8000000

PLASTIC/EPOXY

85 °C

GS8128018GT-200V

Tray

GS8128018GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

295 mA, 360 mA

6.5 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm