SD2942详情
Advanced SD2942重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
M244
Vds - Drain-Source Breakdown Voltage
130 V
Pd - Power Dissipation
500 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 200 C
Vgs - Gate-Source Voltage
4 V
Unit Weight
1.132118 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
SMD/SMT
Manufacturer
Advanced Semiconductor, Inc.
Brand
Advanced Semiconductor, Inc.
RoHS
Details
Id - Continuous Drain Current
40 A
Rds On - Drain-Source Resistance
5 mOhms
包装
Tray
类型
射频功率MOSFET
子类别
MOSFETs
技术
Si
工作频率
250 MHz
配置
Single
输出功率
350 W
产品类别
射频MOSFET晶体管
增益
15 dB
产品类别
射频MOSFET晶体管
SD2942拓展信息
Advanced
Advanced
Advanced
Advanced
Advanced
Advanced
Advanced
Advanced
Advanced
Advanced








哦! 它是空的。