Advanced Power Technology APT35G50BN
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APT35G50BN
42-APT35G50BN
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 35A I(C), 500V V(BR)CES, N-Channel
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APT35G50BN详情
Advanced Power Technology APT35G50BN重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
NO
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
,
Operating Temperature-Max
150 °C
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn/Pb)
Reach合规守则
unknown
极性/通道类型
N-CHANNEL
最大耗散功率(Abs)
162 W
集电极电流-最大值(IC)
35 A
集电极-发射器电压-最大值
500 V
栅极-发射极电压-最大值
20 V
栅极-发射极Thr电压-最大值
5 V
APT35G50BN拓展信息
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology







哦! 它是空的。