Allegro MicroSystems DKI06261

EU RoHS

符合免除

ECCN (US)

EAR99

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

25

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

100

Maximum Drain Source Resistance (MOhm)

21.9@10V

Typical Gate Charge @ Vgs (nC)

14.7@10V|[email protected]

Typical Gate Charge @ 10V (nC)

14.7

Typical Input Capacitance @ Vds (pF)

1050@25V

Maximum Power Dissipation (mW)

32000

Typical Fall Time (ns)

5

Typical Rise Time (ns)

2.3

Typical Turn-Off Delay Time (ns)

10.9

Typical Turn-On Delay Time (ns)

1.9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

活跃

配置

单排双泄

信道型

N