Allegro MicroSystems EKI07174

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

75

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

46

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

100

Maximum Drain Source Resistance (MOhm)

14.1@10V

Typical Gate Charge @ Vgs (nC)

33@10V|[email protected]

Typical Gate Charge @ 10V (nC)

33

Typical Input Capacitance @ Vds (pF)

2520@25V

Maximum Power Dissipation (mW)

90000

Typical Fall Time (ns)

8.7

Typical Rise Time (ns)

4.2

Typical Turn-Off Delay Time (ns)

19.4

Typical Turn-On Delay Time (ns)

4.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

NRND

配置

单排双泄

信道型

N