参数名
参数值
参数名
参数值
底架
通孔
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
3
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
10
Maximum Drain Source Resistance (MOhm)
140@4V@N Channel|140@10V@P Channel
Typical Input Capacitance @ Vds (pF)
460@10V@N Channel|1200@10V@P Channel
Maximum Power Dissipation (mW)
5000
Typical Fall Time (ns)
55@N Channel|100@P Channel
Typical Rise Time (ns)
110@N Channel|170@P Channel
Typical Turn-Off Delay Time (ns)
90@N Channel|180@P Channel
Typical Turn-On Delay Time (ns)
25@N Channel|50@P Channel
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
16
Package Width
4.8
Package Length
31.5(Max)
PCB changed
12
Tab
Tab
Standard Package Name
SIP
Supplier Package
SIP
Lead Shape
通孔
Number of Elements
3
RoHS
Compliant
零件状态
活跃
最高工作温度
150 °C
最小工作温度
-40 °C
最大功率耗散
5 W
引脚数量
12
配置
Triple
功率耗散
5 W
漏源电压 (Vdss)
60 V
连续放电电流(ID)
10 A
栅极至源极电压(Vgs)
20 V
输入电容
460 pF
信道型
N|P
最大rds
140 mΩ