AMI Semiconductor FQI11P06TU

安装类型

通孔

包装/外壳

TO-262-3 Long Leads, I²Pak, TO-262AA

供应商器件包装

I2PAK (TO-262)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Continuous Drain (Id) @ 25℃

11.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

3.13W (Ta), 53W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

操作温度

-55°C ~ 175°C (TJ)

系列

QFET®

包装

Tube

湿度敏感性等级(MSL)

1 (Unlimited)

技术

MOSFET (Metal Oxide)

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

175 mOhm @ 5.7A, 10V

输入电容(Ciss)(Max)@Vds

550pF @ 25V

门极电荷(Qg)(最大)@Vgs

17nC @ 10V

漏源电压 (Vdss)

60V

Vgs（最大值）

±25V

场效应管特性

-