A Power microelectronics AP100N03AD
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AP100N03AD
1604-AP100N03AD
晶体管 - FET,MOSFET - 单个
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30V 100A 4.8mΩ@10V,30A 46W 1.5V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
1最小包装量--
AP100N03AD详情
A Power microelectronics AP100N03AD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
30V
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.8mΩ@10V,30A
Power Dissipation (Pd)
46W
Gate Threshold Voltage (Vgs(th)@Id)
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)
215pF@15V
Input Capacitance (Ciss@Vds)
1.614nF@15V
Total Gate Charge (Qg@Vgs)
33.7nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+175℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
100A
AP100N03AD拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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哦! 它是空的。