A Power microelectronics AP2302AI
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AP2302AI
1604-AP2302AI
晶体管 - FET,MOSFET - 单个
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20V 3.2A 1W 23mΩ@4.5V,3A 700mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS
1最小包装量--
AP2302AI详情
A Power microelectronics AP2302AI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
20V
Power Dissipation (Pd)
1W
Drain Source On Resistance (RDS(on)@Vgs,Id)
23mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)@Id)
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds)
35pF@15V
Input Capacitance (Ciss@Vds)
310pF@15V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
3.2A
AP2302AI拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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