A Power microelectronics AP30P10D
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AP30P10D
1604-AP30P10D
晶体管 - FET,MOSFET - 单个
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100V 30A 54W 78mΩ@10V,10A 1.7V@250uA 1 Piece P-Channel TO-252-3L MOSFETs ROHS
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AP30P10D详情
A Power microelectronics AP30P10D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
100V
Power Dissipation (Pd)
54W
Drain Source On Resistance (RDS(on)@Vgs,Id)
78mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds)
76pF@20V
Input Capacitance (Ciss@Vds)
3.029nF@20V
Total Gate Charge (Qg@Vgs)
44.5nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 Piece P-Channel
Continuous Drain Current (Id)
30A
AP30P10D拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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