A Power microelectronics AP3400AI
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AP3400AI
1604-AP3400AI
晶体管 - FET,MOSFET - 单个
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30V 5.8A 1W 20mΩ@10V,5.8A 850mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS
1最小包装量--
AP3400AI详情
A Power microelectronics AP3400AI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
30V
Power Dissipation (Pd)
1W
Drain Source On Resistance (RDS(on)@Vgs,Id)
20mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)@Id)
850mV@250uA
Reverse Transfer Capacitance (Crss@Vds)
70pF@15V
Input Capacitance (Ciss@Vds)
860pF@15V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
5.8A
AP3400AI拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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