A Power microelectronics AP3400DI
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AP3400DI
1604-AP3400DI
晶体管 - FET,MOSFET - 单个
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20V 3.2A 45mΩ@4.5V,3A 770mW 600mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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AP3400DI详情
A Power microelectronics AP3400DI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
20V
Drain Source On Resistance (RDS(on)@Vgs,Id)
45mΩ@4.5V,3A
Power Dissipation (Pd)
770mW
Gate Threshold Voltage (Vgs(th)@Id)
600mV@250uA
Reverse Transfer Capacitance (Crss@Vds)
28pF@10V
Input Capacitance (Ciss@Vds)
184pF@10V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
3.2A
AP3400DI拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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