A Power microelectronics AP3N06MI
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AP3N06MI
1604-AP3N06MI
晶体管 - FET,MOSFET - 单个
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60V 3A 55mΩ@10V,5A 42W 2.5V@250uA 1 N-Channel SOT-23-3L MOSFETs ROHS
1最小包装量--
AP3N06MI详情
A Power microelectronics AP3N06MI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Drain Source On Resistance (RDS(on)@Vgs,Id)
55mΩ@10V,5A
Power Dissipation (Pd)
42W
Gate Threshold Voltage (Vgs(th)@Id)
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)
7pF@15V
Input Capacitance (Ciss@Vds)
695pF@15V
Total Gate Charge (Qg@Vgs)
5.5nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
3A
AP3N06MI拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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哦! 它是空的。