A Power microelectronics AP40P03DF
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AP40P03DF
1604-AP40P03DF
晶体管 - FET,MOSFET - 单个
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大陆
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30V 40A 11mΩ@10V,10A 3.1W 1.5V@250uA 1 Piece P-Channel PDFN-8(3x3.1) MOSFETs ROHS
1最小包装量--
AP40P03DF详情
A Power microelectronics AP40P03DF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
30V
Drain Source On Resistance (RDS(on)@Vgs,Id)
11mΩ@10V,10A
Power Dissipation (Pd)
3.1W
Gate Threshold Voltage (Vgs(th)@Id)
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)
252pF@10V
Input Capacitance (Ciss@Vds)
2.13pF@10V
Total Gate Charge (Qg@Vgs)
22nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 Piece P-Channel
Continuous Drain Current (Id)
40A
AP40P03DF拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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