A Power microelectronics AP50N06Y
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AP50N06Y
1604-AP50N06Y
晶体管 - FET,MOSFET - 单个
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60V 50A 14mΩ@10V,20A 45W 1.8V@250uA 1 N-Channel TO-251 MOSFETs ROHS
1最小包装量--
AP50N06Y详情
A Power microelectronics AP50N06Y重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Drain Source On Resistance (RDS(on)@Vgs,Id)
14mΩ@10V,20A
Power Dissipation (Pd)
45W
Gate Threshold Voltage (Vgs(th)@Id)
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)
97pF@15V
Input Capacitance (Ciss@Vds)
2.423nF@15V
Total Gate Charge (Qg@Vgs)
Package
Tube-packed
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
50A
AP50N06Y拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
A Power microelectronics
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哦! 它是空的。