A Power microelectronics AP50P02DF
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AP50P02DF
1604-AP50P02DF
晶体管 - FET,MOSFET - 单个
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20V 50A 6.8mΩ@4.5V,15A 29W 600mV@250uA 1 Piece P-Channel PDFN3333-8 MOSFETs ROHS
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AP50P02DF详情
A Power microelectronics AP50P02DF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
20V
Drain Source On Resistance (RDS(on)@Vgs,Id)
6.8mΩ@4.5V,15A
Power Dissipation (Pd)
29W
Gate Threshold Voltage (Vgs(th)@Id)
600mV@250uA
Reverse Transfer Capacitance (Crss@Vds)
431pF@15V
Input Capacitance (Ciss@Vds)
5.783nF@15V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 Piece P-Channel
Continuous Drain Current (Id)
50A
AP50P02DF拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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哦! 它是空的。