A Power microelectronics AP5N04MI
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AP5N04MI
1604-AP5N04MI
晶体管 - FET,MOSFET - 单个
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40V 5A 1W 30mΩ@10V,4A 1.5V@250uA 1 N-Channel SOT-23-3L MOSFETs ROHS
1最小包装量--
AP5N04MI详情
A Power microelectronics AP5N04MI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
40V
Power Dissipation (Pd)
1W
Drain Source On Resistance (RDS(on)@Vgs,Id)
30mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)@Id)
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)
38pF@15V
Input Capacitance (Ciss@Vds)
4.525nF@15V
Package
Tape & Reel (TR)
Total Gate Charge (Qg@Vgs)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
5A
AP5N04MI拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
A Power microelectronics
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哦! 它是空的。