A Power microelectronics AP5N10BI
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AP5N10BI
1604-AP5N10BI
晶体管 - FET,MOSFET - 单个
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100V 5A 3.1W 105mΩ@10V,4A 1.7V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
1最小包装量--
AP5N10BI详情
A Power microelectronics AP5N10BI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
100V
Power Dissipation (Pd)
3.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)
105mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)@Id)
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds)
3.6pF@50V
Input Capacitance (Ciss@Vds)
182pF@50V
Total Gate Charge (Qg@Vgs)
3.57nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
5A
AP5N10BI拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
A Power microelectronics
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哦! 它是空的。