A Power microelectronics AP7N65F

RoHS

true

Drain Source Voltage (Vdss)

650V

Power Dissipation (Pd)

32.9W

Drain Source On Resistance (RDS(on)@Vgs,Id)

1Ω@10V,3.5A

Gate Threshold Voltage (Vgs(th)@Id)

4V@250uA

Reverse Transfer Capacitance (Crss@Vds)

1.5pF@25V

Input Capacitance (Ciss@Vds)

1nF@25V

Total Gate Charge (Qg@Vgs)

22nC@10V

Package

Tube-packed

操作温度

-55℃~+150℃@(Tj)

类型

1 N-Channel

Continuous Drain Current (Id)

7A