Atmel (Microchip Technology) APT50GN60BDQ3G
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APT50GN60BDQ3G
225-APT50GN60BDQ3G
晶体管 - IGBT - 单个
TO-247-3
大陆
立即发货

IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247View in Development Tools Selector
1最小包装量--
APT50GN60BDQ3G详情
Atmel (Microchip Technology) APT50GN60BDQ3G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Continuous Collector Current at 25 C
107 A
Pd - Power Dissipation
366 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Gate-Emitter Leakage Current
600 nA
Factory Pack QuantityFactory Pack Quantity
1
包装
Tube
配置
Single
APT50GN60BDQ3G拓展信息
Atmel (Microchip Technology)
Atmel (Microchip Technology)
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