Atmel (Microchip Technology) APT35GP120B2D2G
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APT35GP120B2D2G
225-APT35GP120B2D2G
晶体管 - IGBT - 单个
TO-247-3
大陆
立即发货

IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAXView in Development Tools Selector
1最小包装量--
APT35GP120B2D2G详情
Atmel (Microchip Technology) APT35GP120B2D2G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
1.2 kV
Maximum Gate Emitter Voltage
- 20 V, + 20 V
Continuous Collector Current at 25 C
96 A
Pd - Power Dissipation
543 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Gate-Emitter Leakage Current
100 nA
Factory Pack QuantityFactory Pack Quantity
1
包装
Tube
配置
Single
APT35GP120B2D2G拓展信息
Atmel (Microchip Technology)
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哦! 它是空的。