参数名
参数值
参数名
参数值
包装/外壳
TO-92-3
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
625 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
50
Collector-Emitter Saturation Voltage
750 mV
Unit Weight
0.009988 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
通孔
Gain Bandwidth Product fT
200 MHz
Manufacturer
Central Semiconductor
Brand
Central Semiconductor
Maximum DC Collector Current
600 mA
DC Current Gain hFE Max
150
RoHS
Details
Collector- Emitter Voltage VCEO Max
40 V
Package Description
,
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Manufacturer Part Number
2N4400PBFREE
Part Life Cycle Code
活跃
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
Risk Rank
5.61
包装
Bulk
JESD-609代码
e3
端子表面处理
镍外哑光锡
子类别
Transistors
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
60 V
连续集电极电流
600 mA
产品类别
Bipolar Transistors - BJT