参数名
参数值
参数名
参数值
包装/外壳
1206 (3216 Metric)
供应商器件包装
1206
Package
Tape & Reel (TR)
Base Product Number
TNPW1206
Product Status
活跃
厂商
Vishay Dale
Emitter-Base Voltage
4(V)
Operating Temperature Classification
Military
Package Type
TO-39
Transistor Polarity
NPN
Collector-Base Voltage
100(V)
Category
双极电源
Operating Temp Range
-65C to 200C
Collector Current (DC)
1(A)
Number of Elements
1
Rad Hardened
无
DC Current Gain
5@1A@2V/40@250MA@2V
Mounting
通孔
Emitter- Base Voltage VEBO
4 V
Pd - Power Dissipation
1 W
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
40 at 250 mA, 2 V
Collector-Emitter Saturation Voltage
2 V
Unit Weight
0.035486 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
500
Mounting Styles
通孔
Gain Bandwidth Product fT
30 MHz
Manufacturer
Central Semiconductor
Brand
Central Semiconductor
Maximum DC Collector Current
1 A
DC Current Gain hFE Max
150 at 250 mA, 2 V
RoHS
Details
Collector- Emitter Voltage VCEO Max
100 V
操作温度
-55°C ~ 125°C
系列
TNPW
包装
Box
尺寸/尺寸
0.126 L x 0.063 W (3.20mm x 1.60mm)
容差
±0.1%
终止次数
2
温度系数
±25ppm/°C
电阻
274 Ohms
组成
Thin Film
功率(瓦特)
0.25W, 1/4W
子类别
Transistors
技术
Si
频率
30(MHz)
引脚数量
3
失败率
-
配置
Single
功率耗散
1(W)
输出功率
Not Required(W)
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
100 V
连续集电极电流
1 A
特征
-
产品类别
Bipolar Transistors - BJT
座位高度(最大)
0.026 (0.65mm)