Central Semiconductor 2N4953 PBFREE

包装/外壳

TO-92-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

30 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

300 mV

Pd - Power Dissipation

625 mW

Gain Bandwidth Product fT

250 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

75 at 10 V, 1 mA

DC Current Gain hFE Max

600 at 10 V, 150 mA

Factory Pack QuantityFactory Pack Quantity

2500

Package Description

CYLINDRICAL, O-PBCY-T3

Package Style

CYLINDRICAL

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-65 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Transition Frequency-Nom (fT)

250 MHz

Manufacturer Part Number

2N4953PBFREE

Turn-on Time-Max (ton)

40 ns

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Turn-off Time-Max (toff)

400 ns

Risk Rank

5.66

系列

2N4953

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

端子位置

BOTTOM

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-PBCY-T3

配置

Single

晶体管应用

SWITCHING

极性/通道类型

NPN

JEDEC-95代码

TO-92

集电极基极电压(VCBO)

60 V

最大耗散功率(Abs)

0.625 W

集电极电流-最大值(IC)

1 A

最小直流增益（hFE）

200

连续集电极电流

1 A

集电极-发射器电压-最大值

30 V

VCEsat-最大值

0.3 V

集电极-基极电容-最大值

8 pF

环境耗散-最大值

0.625 W