参数名
参数值
参数名
参数值
包装/外壳
TO-202
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
25
Factory Pack QuantityFactory Pack Quantity
500
Part # Aliases
MPSU10
Unit Weight
0.050724 oz
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
300 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum DC Collector Current
500 mA
Pd - Power Dissipation
1.75 W
Gain Bandwidth Product fT
45 MHz
Package Description
FLANGE MOUNT, R-PSFM-T3
Package Style
FLANGE MOUNT
Moisture Sensitivity Levels
1
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-65 °C
Reflow Temperature-Max (s)
30
Operating Temperature-Max
150 °C
Rohs Code
有
Transition Frequency-Nom (fT)
45 MHz
Manufacturer Part Number
CEN-U10PBFREE
Package Shape
RECTANGULAR
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
Risk Rank
5.74
包装
Bulk
JESD-609代码
e3
端子表面处理
Matte Tin (Sn) - with Nickel (Ni) barrier
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
JESD-30代码
R-PSFM-T3
配置
Single
箱体转运
COLLECTOR
晶体管应用
AMPLIFIER
极性/通道类型
NPN
JEDEC-95代码
TO-202
集电极基极电压(VCBO)
300 V
最大耗散功率(Abs)
10 W
集电极电流-最大值(IC)
0.5 A
最小直流增益(hFE)
40
连续集电极电流
500 mA
集电极-发射器电压-最大值
300 V
VCEsat-最大值
1.5 V
集电极-基极电容-最大值
3 pF
环境耗散-最大值
1.75 W