Central Semiconductor MPS6531 PBFREE

包装/外壳

TO-92

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

40 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

300 mV

Maximum DC Collector Current

600 mA

Pd - Power Dissipation

625 mW

Gain Bandwidth Product fT

300 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

90

DC Current Gain hFE Max

270

Factory Pack QuantityFactory Pack Quantity

2500

Unit Weight

0.016000 oz

Package Description

CYLINDRICAL, O-PBCY-T3

Package Style

CYLINDRICAL

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-65 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Transition Frequency-Nom (fT)

300 MHz

Manufacturer Part Number

MPS6531PBFREE

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.66

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn)

端子位置

BOTTOM

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-PBCY-T3

配置

Single

晶体管应用

AMPLIFIER

极性/通道类型

NPN

JEDEC-95代码

TO-92

集电极基极电压(VCBO)

60 V

最大耗散功率(Abs)

0.625 W

集电极电流-最大值(IC)

0.6 A

最小直流增益（hFE）

90

连续集电极电流

600 mA

集电极-发射器电压-最大值

40 V

VCEsat-最大值

0.3 V

集电极-基极电容-最大值

5 pF

环境耗散-最大值

0.625 W