Diodes Incorporated DMN33D9LV-7A

工厂交货时间

16 Weeks

安装类型

表面贴装

包装/外壳

SOT-563, SOT-666

表面安装

YES

供应商器件包装

SOT-563

终端数量

6

晶体管元件材料

SILICON

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

350mA (Ta)

MSL

MSL 1 - Unlimited

Qualification

-

Transistor Polarity

N通道

Continuous Drain Current Id

350mA

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

2.9 ns

Vgs th - Gate-Source Threshold Voltage

1.4 V

Pd - Power Dissipation

430 mW

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

1.23 nC

Rds On - Drain-Source Resistance

2.4 Ohms

Typical Turn-Off Delay Time

18.2 ns

Id - Continuous Drain Current

350 mA

Package Description

SMALL OUTLINE, R-PDSO-F6

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

DMN33D9LV-7A

Package Shape

RECTANGULAR

Number of Elements

2

Part Life Cycle Code

活跃

Ihs Manufacturer

DIODES INC

Risk Rank

1.66

Drain Current-Max (ID)

0.35 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

端子位置

DUAL

终端形式

FLAT

Reach合规守则

unknown

JESD-30代码

R-PDSO-F6

配置

Dual

通道数量

2 Channel

操作模式

增强型MOSFET

功率 - 最大

430mW (Ta)

场效应管类型

2 N-Channel (Dual)

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

2.4Ohm @ 250mA, 10V

不同 Id 时 Vgs(th)（最大值）

1.4V @ 100μA

输入电容(Ciss)(Max)@Vds

48pF @ 5V

门极电荷(Qg)(最大)@Vgs

1.23nC @ 10V

上升时间

2.6 ns

漏源电压 (Vdss)

30V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

2 N-Channel

漏极-源极导通最大电阻

0.0024 Ω

DS 击穿电压-最小值

30 V

信道型

N通道

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

0.43 W

场效应管特性

Standard

反馈上限-最大值 (Crss)

8 pF

产品类别

MOSFET