参数名
参数值
参数名
参数值
工厂交货时间
23 Weeks
安装类型
表面贴装
包装/外壳
SOT-23-6 Thin, TSOT-23-6
供应商器件包装
TSOT-26
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
1.8A (Ta)
Continuous Drain Current Id
1.8A
Transistor Polarity
P Channel
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
4 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
740 mW
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 10 V, + 10 V
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
6 nC
Rds On - Drain-Source Resistance
150 mOhms
Typical Turn-Off Delay Time
24.5 ns
Id - Continuous Drain Current
1.8 A
Manufacturer Part Number
DMP2110UVTQ-7
Part Life Cycle Code
活跃
Ihs Manufacturer
DIODES INC
Risk Rank
5.59
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
切割胶带
子类别
MOSFETs
技术
Si
Reach合规守则
unknown
配置
Dual
通道数量
2 Channel
功率 - 最大
740mW (Ta)
场效应管类型
2 P-Channel (Dual)
Rds On(Max)@Id,Vgs
150mOhm @ 2.8A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1V @ 250μA
输入电容(Ciss)(Max)@Vds
443pF @ 6V
门极电荷(Qg)(最大)@Vgs
6nC @ 4.5V
上升时间
3.7 ns
漏源电压 (Vdss)
20V
产品类别
MOSFET
晶体管类型
2 P-Channel
信道型
P Channel
场效应管特性
Standard
产品类别
MOSFET