Diodes Incorporated DMTH4008LPDW-13

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PowerDI5060-8 (Type UXD)

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

10A (Ta), 46.2A (Tc)

Number of Elements per Chip

1

Package Type

PowerDI5060-8

Channel Mode

Enhancement

Qualification

-

Transistor Polarity

N通道

Continuous Drain Current Id

46.2A

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

3.82 ns

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

2.67 W

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003422 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

12.3 nC

Rds On - Drain-Source Resistance

12.3 mOhms

Typical Turn-Off Delay Time

12.6 ns

Id - Continuous Drain Current

10 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

2 Channel

功率 - 最大

2.67W (Ta), 39.4W (Tc)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

12.3mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 250μA

输入电容(Ciss)(Max)@Vds

881pF @ 20V

门极电荷(Qg)(最大)@Vgs

12.3nC @ 10V

上升时间

4.76 ns

漏源电压 (Vdss)

40V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

Standard

产品类别

MOSFET