参数名
参数值
参数名
参数值
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
TMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
1.6
Maximum Drain Source Resistance (MOhm)
210@10V
Typical Gate Charge @ Vgs (nC)
6.4@10V|3.8@5V
Typical Gate Charge @ 10V (nC)
6.4
Typical Input Capacitance @ Vds (pF)
206@15V
Maximum Power Dissipation (mW)
806
Typical Fall Time (ns)
7.6
Typical Rise Time (ns)
3
Typical Turn-Off Delay Time (ns)
11.1
Typical Turn-On Delay Time (ns)
1.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Lead Shape
Gull-wing
Supplier Package
SOT-23
Standard Package Name
SOT
PCB changed
3
Package Length
3.04(Max)
Package Width
1.4(Max)
Package Height
1.02(Max)
Mounting
表面贴装
Package Description
SMALL OUTLINE, R-PDSO-G3
Package Style
小概要
Moisture Sensitivity Levels
1
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
40
Rohs Code
有
Manufacturer Part Number
ZXMP3A13FTC
Package Shape
RECTANGULAR
Manufacturer
Zetex / Diodes Inc
Number of Elements
1
Part Life Cycle Code
Transferred
Ihs Manufacturer
ZETEX PLC
Risk Rank
5.13
Drain Current-Max (ID)
1.4 A
包装
卷带
JESD-609代码
e3
零件状态
活跃
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
附加功能
低阈值
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
引脚数量
3
JESD-30代码
R-PDSO-G3
资历状况
不合格
配置
Single
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
漏极-源极导通最大电阻
0.21 Ω
DS 击穿电压-最小值
30 V
信道型
P
场效应管技术
METAL-OXIDE SEMICONDUCTOR