Diodes Incorporated ZXMP6A17DN8TC

表面安装

YES

终端数量

8

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

20

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

2.7

Maximum Drain Source Resistance (mOhm)

125@10V

Typical Gate Charge @ Vgs (nC)

9.8@5V|17.7@10V

Typical Gate Charge @ 10V (nC)

17.7

Typical Input Capacitance @ Vds (pF)

637@30V

Maximum Power Dissipation (mW)

2150

Typical Fall Time (ns)

11.3

Typical Rise Time (ns)

3.4

Typical Turn-Off Delay Time (ns)

26.2

Typical Turn-On Delay Time (ns)

2.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

Continuous Drain Current

2.7(A)

Drain-Source On-Volt

20(V)

Operating Temperature Classification

Military

Package Type

SOIC

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

2

Rad Hardened

无

Package Description

SO-8

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Rohs Code

有

Manufacturer Part Number

ZXMP6A17DN8TC

Package Shape

RECTANGULAR

Manufacturer

Zetex / Diodes Inc

Part Life Cycle Code

Transferred

Ihs Manufacturer

ZETEX PLC

Risk Rank

7.01

Drain Current-Max (ID)

2.3 A

包装

卷带

JESD-609代码

e3

零件状态

活跃

ECCN 代码

EAR99

类型

功率MOSFET

端子表面处理

Matte Tin (Sn)

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

引脚数量

8

JESD-30代码

R-PDSO-G8

资历状况

不合格

极性

P

配置

双排双泄

操作模式

增强型MOSFET

功率耗散

2.15(W)

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

漏极-源极导通最大电阻

0.125 Ω

脉冲漏极电流-最大值(IDM)

11.1 A

DS 击穿电压-最小值

60 V

信道型

P

场效应管技术

METAL-OXIDE SEMICONDUCTOR