Hangzhou Silan Microelectronics SVF2N70MJ

RoHS

true

Drain Source Voltage (Vdss)

700V

Drain Source On Resistance (RDS(on)@Vgs,Id)

5Ω@10V,1A

Power Dissipation (Pd)

40W

Gate Threshold Voltage (Vgs(th)@Id)

4V@250uA

Reverse Transfer Capacitance (Crss@Vds)

1.3pF@25V

Input Capacitance (Ciss@Vds)

260.1pF@25V

Total Gate Charge (Qg@Vgs)

5.96nC@10V

Package

Tube-packed

操作温度

-55℃~+150℃@(Tj)

类型

1 N-Channel

Continuous Drain Current (Id)

2A