BC80740E6433XT详情
Infineon BC80740E6433XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
表面贴装
引脚数
3
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
有
PPAP
Unknown
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
50
Maximum Collector-Emitter Voltage (V)
45
Maximum Emitter Base Voltage (V)
5
Operating Junction Temperature (°C)
150
Maximum Base Emitter Saturation Voltage (V)
1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)
0.7@50mA@500mA
Maximum DC Collector Current (A)
0.5
Maximum Collector Cut-Off Current (nA)
100
Minimum DC Current Gain
250@100mA@1V|40@500mA@1V
Maximum Power Dissipation (mW)
330
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
Number of Elements
1
RoHS
Compliant
包装
卷带
零件状态
Obsolete
类型
PNP
最高工作温度
150 °C
最小工作温度
-65 °C
频率
200 MHz
引脚数量
3
极性
PNP
配置
Single
功率耗散
330 mW
集电极发射器电压(VCEO)
45 V
集电极基极电压(VCBO)
50 V
发射极基极电压 (VEBO)
5 V
BC80740E6433XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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