BC80840E6327XT详情
Infineon BC80840E6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
有
PPAP
Unknown
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
30
Maximum Collector-Emitter Voltage (V)
25
Maximum Emitter Base Voltage (V)
5
Operating Junction Temperature (°C)
150
Maximum Base Emitter Saturation Voltage (V)
1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)
0.7@50mA@500mA
Maximum DC Collector Current (A)
0.5
Maximum Collector Cut-Off Current (nA)
100
Minimum DC Current Gain
250@100mA@1V|40@500mA@1V
Maximum Power Dissipation (mW)
330
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
类型
PNP
引脚数量
3
配置
Single
BC80840E6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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