BC81740WE6327XT详情
Infineon BC81740WE6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
3
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.75
Automotive
无
PPAP
无
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
50
Maximum Collector-Emitter Voltage (V)
45
Maximum Emitter Base Voltage (V)
5
Maximum Base Emitter Saturation Voltage (V)
1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)
0.7@50mA@500mA
Maximum DC Collector Current (A)
0.5
Minimum DC Current Gain
170@300mA@1V|250@100mA@1V
Maximum Power Dissipation (mW)
250
Maximum Transition Frequency (MHz)
170(Typ)
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
0.9(Max)
Package Width
1.25
Package Length
2
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-323
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
类型
NPN
配置
Single
BC81740WE6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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