BC 817K-40 E6433详情
Infineon BC 817K-40 E6433重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-23-3
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
500 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
250 at 100mA, 1 V
Collector-Emitter Saturation Voltage
700 mV
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
40000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
170 MHz
Part # Aliases
BC817K4E6433XT SP000271898 BC817K40E6433HTMA1
Manufacturer
Infineon
Brand
Infineon Technologies
Maximum DC Collector Current
500 mA
DC Current Gain hFE Max
630 at 100 mA, 1 V
RoHS
Details
Collector- Emitter Voltage VCEO Max
45 V
系列
BC 817K
包装
MouseReel
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
50 V
连续集电极电流
500 mA
产品类别
Bipolar Transistors - BJT
宽度
1.3 mm
高度
1 mm
长度
2.9 mm
BC 817K-40 E6433拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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