BC846BWE6327XT详情
Infineon BC846BWE6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
80
Maximum Collector-Emitter Voltage (V)
65
Maximum Emitter Base Voltage (V)
6
Operating Junction Temperature (°C)
150
Maximum Base Emitter Saturation Voltage (V)
0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)
[email protected]@10mA|0.6@5mA@100mA
Maximum DC Collector Current (A)
0.1
Maximum Collector Cut-Off Current (nA)
15(Typ)
Minimum DC Current Gain
200@2mA@5V
Maximum Power Dissipation (mW)
250
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
0.9(Max)
Package Width
1.25
Package Length
2
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-323
Lead Shape
Gull-wing
PPAP
Unknown
Automotive
有
ECCN (US)
EAR99
EU RoHS
Compliant
包装
卷带
零件状态
Obsolete
类型
NPN
引脚数量
3
配置
Single
BC846BWE6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。