Infineon BC 846S H6327

包装/外壳

SOT-363-6

表面安装

YES

引脚数

6

终端数量

6

晶体管元件材料

SILICON

Package

Bulk

厂商

PEI-Genesis

Product Status

活跃

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

250 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

200

Collector- Emitter Voltage VCEO Max

65 V

RoHS

Details

DC Current Gain hFE Max

450

Maximum DC Collector Current

100 mA

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

SP000746922 BC846SH6327XT BC846SH6327XTSA1

Gain Bandwidth Product fT

250 MHz

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

18000

Minimum Operating Temperature

- 65 C

Unit Weight

0.000212 oz

Collector-Emitter Saturation Voltage

200 mV

Risk Rank

5.72

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Part Life Cycle Code

生命周期结束

Number of Elements

2

Package Shape

RECTANGULAR

Manufacturer Part Number

BC846SH6327

Transition Frequency-Nom (fT)

250 MHz

Rohs Code

有

Reflow Temperature-Max (s)

40

Package Body Material

PLASTIC/EPOXY

Package Style

小概要

Package Description

SMALL OUTLINE, R-PDSO-G6

系列

*

包装

MouseReel

JESD-609代码

e3

无铅代码

有

ECCN 代码

EAR99

端子表面处理

Tin (Sn)

子类别

Transistors

技术

Si

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

参考标准

AEC-Q101

JESD-30代码

R-PDSO-G6

配置

Dual

晶体管应用

AMPLIFIER

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

80 V

集电极电流-最大值(IC)

0.1 A

最小直流增益（hFE）

200

连续集电极电流

100 mA

集电极-发射器电压-最大值

65 V

产品类别

Bipolar Transistors - BJT