BC847BE6327T详情
Infineon BC847BE6327T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.75
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
50
Maximum Collector-Emitter Voltage (V)
45
Maximum Emitter Base Voltage (V)
6
Maximum Base Emitter Saturation Voltage (V)
0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)
0.6@5mA@100mA|[email protected]@10mA
Maximum DC Collector Current (A)
0.1
Maximum Collector Cut-Off Current (nA)
100
Minimum DC Current Gain
200@2mA@5V
Maximum Power Dissipation (mW)
330
Maximum Transition Frequency (MHz)
250(Typ)
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
包装
卷带
零件状态
LTB
类型
NPN
配置
Single
BC847BE6327T拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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