BC847CE6433XT详情
Infineon BC847CE6433XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
有
PPAP
Unknown
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
50
Maximum Collector-Emitter Voltage (V)
45
Maximum Emitter Base Voltage (V)
6
Operating Junction Temperature (°C)
150
Maximum Base Emitter Saturation Voltage (V)
0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)
0.6@5mA@100mA|[email protected]@10mA
Maximum DC Collector Current (A)
0.1
Maximum Collector Cut-Off Current (nA)
15(Typ)
Minimum DC Current Gain
420@2mA@5V
Maximum Power Dissipation (mW)
330
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
包装
卷带
零件状态
LTB
类型
NPN
引脚数量
3
配置
Single
BC847CE6433XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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